| Materials
Development Corporation |
|
Measurement Specifications
CSM/Win SEMICONDUCTOR MEASUREMENT SYSTEM
Calculated Parameter Specifications
| Junction
Doping Profiles: |
| Range: |
1x1013 ions/cm3 to 1xlO18 ions/cm3, 0.01 microns
to 100 microns. Depth and doping ranges limited by zero-bias
depletion width, breakdown voltage, and instrument voltage range. |
| Typical Values: |
Doping: 1x1015 ions/cm3, Depth: 1 micron to 17
microns. Doping: 1x1016 ions/cm3, Depth: 0.33 microns to 2.5
microns. |
| Accuracy: |
Typically ±2%, dependent on supplied device area. |
| MOS
DOPING PROFILES: |
| Range: |
2x1014 ions/cm3 to 5x1017 ions/cm3, 0.01 microns
to 10 microns. Depth and doping ranges limited by bulk breakdown
voltage of semiconductor, oxide breakdown, and instrument voltage
range. |
| Typical Values: |
Doping: 1x1015 ions/cm3, Depth: 0.01 microns to
5 microns. Doping: 1x1016 ions/cm3, Depth: 0.01 microns to 2
microns. |
| Accuracy: |
Typically ±5%, dependent on supplied device area. |
| Implant
Dose Calculations: |
| Range: |
5x1010 ions/cm2 to 5x1012 ions/cm2. |
| Accuracy: |
Typically ±8%, dependent on supplied oxide thickness. |
| Lifetime |
| Range: |
0.1 microsecond to 0.1 second. |
| Typical Values: |
100 microseconds to 1000 microseconds |
| Accuracy: |
Typically ±8%, dependent on user supplied parameters |
| Flatband
Voltage Shift: |
| Range: |
0.005 Volts to 50 Volts. |
| Typical Values: |
0.05 Volts to 0.2 Volts. |
| Accuracy: |
Typically ±2%, or ±0.005 Volts, dependent on supplied
oxide thickness. |
| Mobile Ionic Charge
Concentration: (Bias-Temperature
Vfb Shift Method) |
| Range: |
1x1010 ions/cm2 to
1x1013 ions/cm2. |
| Typical Values: |
3x1010 ions/cm2. |
| Accuracy: |
Typically ±2%, ± 1x1010 ions/cm2,
dependent on user supplied oxide thickness. |
| Mobile
Ionic Charge Concentration: (Quasi-static/TVS Method) |
| Range: |
1x109 ions/cm2 to
1x1012 ions/cm2. |
| Typical Values: |
3x1010 ions/cm2. |
| Accuracy: |
Typically ±5%, ±1x109 ions/cm2,
dependent on user supplied oxide thickness. |
| Interface
Trap Density: (Quasi-Static/High Frequency Method) |
| Range: |
2x1010 ions/cm2eV
to 1x1012 ions/cm2/eV |
| Typical Values: |
3x1010ions/cm2/eV, midgap. |
| Accuracy: |
Typically ±10%, ±1x1010ions/cm2/eV
dependent on user supplied parameters. |
| Interface
Trap Density: (Variable Frequency Method) |
| Range: |
2x109 ions/cm2eV
to 1x1012 ions/cm2eV |
| Typical Values: |
2x1010 ions/cm2eV midgap. |
| Accuracy: |
Typically ±7%, ±3x109 ions/cm2eV,
dependent on user supplied parameters. |
| Current
Voltage-Plots: |
| Range: |
±100 Volts, ±10 fA
to ±1 mA. |
| Accuracy: |
Typically ±1%. |
| Junction
Diode Parameters: |
| Range: |
Rs: 0.1 to 1000 Ohms,
Is: 1x10-13 to 1x10-8 Amps, n: 1.0 to 2.0. |
| Typical Values: |
Rs: 2 Ohms, Is: 1x10-11 Amps,
n: 1.2. |
| Accuracy: |
Typically ±5%. |
| Oxide
Breakdown Field: (Ramped Voltage or Forced Current Method) |
| Range: |
0 to 20 MV/cm. |
| Typical Values: |
8 MV/cm. |
| Accuracy: |
Typically ±5%, dependent on user
supplied oxide thickness. |
Notes:
1. Calculated parameter accuracies are
given for measurements where appropriate corrections, such as those
for series resistance effects, have been used. Large errors may result
where needed corrections are not performed.
2. Some of the parameters listed are obtained only by using special
options such as a quasi-static option, a current-voltage option, or
a variable frequency option.
3. Some of the parameter accuracies shown may be affected by the type
of capacitance/conductance meter used.
4. Doping and depth ranges assume a CSM/Win with ± 100 Volt bias range.
For more information on MDC product lines
visit their website at http://www.mdc4cv.com
|
